FMMT491 100-300

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT491 SOT-23 TRANSISTOR (NPN) FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Continuous Collector Current 1 A ICM Peak Pulse Current 2 A PC Collector Power Dissipation 250 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA hFE(1) VCE=5V,IC=1mA 100 hFE(2) 1 VCE=5V,IC=500mA 100 hFE(3) 1 VCE=5V,IC=1A 80 hFE(4) 1 VCE=5V,IC=2A 30 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat)1 1 IC=500mA,IB=50mA 0.25 V VCE(sat)2 1 IC=1A,IB=100mA 0.5 V VBE(sat) 1 IC=1A,IB=100mA 1.1 V 1 V Base-emitter voltage VBE1 Transition frequency fT Collector output capacitance 1 Symbol Cob VCE=5V,IC=1A VCE=10V,IC=50mA,,f=100MHz VCB=10V,f=1MHz 150 MHz 10 pF Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%. C,Dec,2011 Typical Characterisitics FMMT491 hFE Static Characteristic 400 1.8mA 300 o Ta=100 C hFE 1.6mA IC 1.4mA DC CURRENT GAIN (mA) IC COMMON EMITTER Ta=25℃ 2mA COLLECTOR CURRENT —— 1000 1.2mA 200 1mA 0.8mA 100 0.6mA o Ta=25 C 100 0.4mA COMMON EMITTER VCE=5V IB=0.2mA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 10 10 1 10 100 COLLECTOR CURRENT (V) IC VBEsat 1200 1000 IC 2000 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 100 Ta=100℃ Ta=25℃ 1000 800 Ta=25℃ 600 Ta=100℃ 400 β=10 10 200 1 10 100 COLLECTOR CURRENT IC 1000 IC 1000 1 10 100 COLLECTOR CURRENT (mA) —— VBE Cob/ Cib 1000 IC 1000 (mA) —— VCB/ VEB COMMON EMITTER VCE=5V f=1MHz IE=0/ IC=0 (pF) (mA) 100 C Ta=100℃ CAPACITANCE IC COLLCETOR CURRENT 100 Ta=25℃ 10 1 200 400 600 800 BASE-EMMITER VOLTAGE fT —— VBE Cob 10 1 0.1 1000 1 10 REVERSE VOLTAGE (mV) IC Pc —— V 20 (V) Ta 300 fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) 500 TRANSITION FREQUENCY o Ta=25 C Cib 100 COMMON EMITTER VCE=5V 250 200 150 100 50 o Ta=25 C 10 3 60 10 COLLECTOR CURRENT IC (mA) 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150 C,Dec,2011